RESEARCH OF AVALANCHE BREAKDOWN OF P-N JUNCTIONS

Abstract

The perfection of the source material, at the same time, very much depends on the technological processing methods used. Dislocations in the crystal structure are generated due to the occurrence of internal stresses, leading to plastic deformation of the material. Numerous studies have shown that one of the main causes of degradation and failure of semiconductor devices is the presence of internal mechanical stresses in them, the relaxation of which is accompanied by the appearance of structural defects.